Selective oxidation of gate stack
US7189652B1 · kind B1 · utility
12Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Nov 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure comprises oxidizing a stack, to form sidewall oxide in contact with sides of the stack. The stack is on a semiconductor substrate, the stack includes a gate layer, comprising silicon; a metallic layer, on the gate layer; and an etch-stop layer, on the metallic layer. The sidewall oxide in contact with the metallic layer is thinner than the sidewall oxide in contact with the gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.