Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same
US7189661B2 · kind B2 · utility
1Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2005 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Jul 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction gas to a substrate to be treated after completing the annealing process. The apparatus includes a sealed processing room having gas supply and exhaust lines running thereto. A quartz inner tube and quartz inlet pipe both include holes therethrough, but in orthogonal directions to one another, to flow a reaction gas onto the wafers loaded within the sealed processing room.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.