GaN based semiconductor light emitting device and method of making the same
US7190001B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Aug 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.