Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US7190611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Jan 7, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.