Polysilane thin films for directly patternable waveguides
US7190871B2 · kind B2 · utility
17Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Apr 9, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/132
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A waveguide structure includes a substrate. A layer of high index material includes polysilane, which is patterned using a UV light source to form a waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.