Laser annealing mask and method for smoothing an annealed surface
US7192479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2002 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jul 23, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.