Polysilicon thin film fabrication method
US7192818B1 · kind B1 · utility
32Cited by
1References
9Claims
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Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Oct 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.