Method for forming a silicon oxide layer using spin-on glass
US7192891B2 · kind B2 · utility
9Cited by
12References
47Claims
0Family size
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Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Apr 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting the SOG layer to a silicon oxide layer using an oxidant solution. The oxidant solution may include one or more oxidants including, for example, ozone, peroxides, permanganates, hypochlorites, chlorites, chlorates, perchlorates, hypobromites, bromites, bromates, hypoiodites, iodites, iodates and strong acids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.