Semiconductor substrate comprising a support substrate which comprises a gettering site
US7193294B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Dec 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.