Method for measuring thickness of thin film-like material during surface polishing, and surface polishing method and surface polishing apparatus
US7193724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jul 16, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A thickness of a wafer during polishing operation is detected to accurately perform the polishing. A thickness measuring method, which measures the thickness of the wafer of wafer 7 in polishing a surface, comprises the steps of irradiating the thin film-like material during the surface polishing from a backside with probe light, measuring a reflectance spectrum with a dispersion type multi-channel spectroscope using a photodiode array which has particularly high sensitivity to light having a wavelength ranging from 1 to 2.4 μm, and calculating the thickness on the basis of a wave form of the reflectance spectrum. The surface polishing is performed while the thickness of the wafer 7 is measured by the above-described thickness measuring method, and the polishing is finished when the thickness of the wafer 7 reaches a target thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.