Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
US7193890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2005 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Nov 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.