Sumio Ikegawa
50Patents
8h-index
60Co-inventors
81Inventor score
Filing activity: Feb 6, 1987 → Mar 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8009465B2 | Magnetoresistive element | Emerging Cross-Sectional Technologies | 49 | Active |
| US8014193B2 | Magnetoresistance effect element and magnetic random access memory | Electricity | 37 | Active |
| US8279663B2 | Magnetoresistance effect element and magnetic random access memory | Electricity | 32 | Active |
| US8223533B2 | Magnetoresistive effect device and magnetic memory | Electricity | 19 | Active |
| US4855992A | Reversible optical recording medium with an optothermally deformable recording layer | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7038939B2 | Magneto-resistance effect element and magnetic memory | Physics | 16 | Expired |
| US7355884B2 | Magnetoresistive element | Emerging Cross-Sectional Technologies | 15 | Active |
| US7518907B2 | Magnetoresistive element | Emerging Cross-Sectional Technologies | 10 | Active |
| US8472242B2 | Magnetoresistive effect memory | Physics | 8 | Active |
| US8347175B2 | Magnetic memory | Electricity | 8 | Active |
| US4839861A | Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same | Physics | 7 | Expired |
| US7193890B2 | Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method | Electricity | 7 | Expired |
| US4922462A | Reversible memory structure for optical reading and writing and which is capable of erasure | Physics | 7 | Expired |
| US7245524B2 | Magnetic memory device and write method of magnetic memory device | Physics | 7 | Expired |
| US5629267A | Superconducting element having an intermediate layer with multiple fluorite blocks | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7894246B2 | Magnetoresistive element and magnetic memory | Electricity | 5 | Active |
| US8120948B2 | Data writing method for magnetoresistive effect element and magnetic memory | Physics | 4 | Active |
| US7518906B2 | Magneto-resistive element | Physics | 4 | Active |
| US7898846B2 | Magnetoresistive element | Electricity | 4 | Active |
| US7411263B2 | Magnetic memory device | Electricity | 4 | Active |
| US7203088B2 | Magnetoresistive random access memory and driving method thereof | Physics | 4 | Expired |
| US8878321B2 | Magnetoresistive element and producing method thereof | Electricity | 4 | Active |
| US8143684B2 | Magnetoresistive element | Electricity | 3 | Active |
| US11488647B2 | Stacked magnetoresistive structures and methods therefor | Physics | 2 | Active |
| US7414880B2 | Magnetoresistive effect element and magnetic memory | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.