Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same
US7195673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Apr 5, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.