Development defect preventing process and material
US7195863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2001 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jul 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.