Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
US7195993B2 · kind B2 · utility
68Cited by
55References
10Claims
0Family size
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Key dates
| Filing date | Aug 10, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Dec 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.