Aluminum oxide as liner or cover layer to spacers in memory device
US7196008B1 · kind B1 · utility
6Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2005 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For fabricating a memory device, spacers are formed to sides of word-line gates. In addition, aluminum oxide is formed as one of a liner layer or a cover layer to the spacers. The aluminum oxide has a chemical composition of Al2O3 for example. Such aluminum oxide may be used as an etch stop layer in a periphery region, a metal silicide block, and a hydrogen block for enhanced performance of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.