Spansion LLC.
🏢 View company profile →1,078Patents
816Active
1,078Granted
61Portfolio score
Filing activity: Jun 9, 2000 → Aug 14, 2014 · 644 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7945792B2 | Tamper reactive memory device to secure data from tamper attacks | Physics | 1,151 | Active |
| US7414281B1 | Flash memory with high-K dielectric material between substrate and gate | Electricity | 531 | Expired |
| US7979667B2 | Memory array search engine | Physics | 414 | Active |
| US7440333B2 | Method of determining voltage compensation for flash memory devices | Physics | 226 | Active |
| US8117521B2 | Implementation of recycling unused ECC parity bits during flash memory programming | Physics | 167 | Active |
| US8650399B2 | Memory device and chip set processor pairing | Electricity | 153 | Active |
| US7344912B1 | Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene) | Electricity | 152 | Expired |
| US7038950B1 | Multi bit program algorithm | Physics | 121 | Expired |
| US7130210B2 | Multi-level ONO flash program algorithm for threshold width control | Physics | 98 | Expired |
| US7042766B1 | Method of programming a flash memory device using multilevel charge storage | Physics | 97 | Expired |
| US7115469B1 | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process | Electricity | 95 | Expired |
| US7391064B1 | Memory device with a selection element and a control line in a substantially similar layer | Electricity | 94 | Expired |
| US7289353B2 | Systems and methods for adjusting programming thresholds of polymer memory cells | Physics | 89 | Expired |
| US7221599B1 | Polymer memory cell operation | Physics | 88 | Expired |
| US7035141B1 | Diode array architecture for addressing nanoscale resistive memory arrays | Physics | 85 | Expired |
| US7365389B1 | Memory cell having enhanced high-K dielectric | Electricity | 76 | Expired |
| US7696017B1 | Memory device with a selection element and a control line in a substantially similar layer | Electricity | 76 | Active |
| US7184338B2 | Semiconductor device, semiconductor device testing method, and programming method | Physics | 72 | Expired |
| US8190919B2 | Multiple stakeholder secure memory partitioning and access control | Physics | 50 | Active |
| US7743203B2 | Managing flash memory based upon usage history | Physics | 45 | Active |
| US7116154B2 | Low power charge pump | Electricity | 42 | Expired |
| US7253046B2 | Semiconductor memory device and manufacturing method thereof | Electricity | 40 | Expired |
| US7739559B2 | Semiconductor device and program data redundancy method therefor | Physics | 39 | Active |
| US7262422B2 | Use of supercritical fluid to dry wafer and clean lens in immersion lithography | Physics | 36 | Expired |
| US7196372B1 | Flash memory device | Electricity | 35 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.