Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
US7196211B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Sep 9, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | May 6, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/003
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.