Compensating for coupling during read operations of non-volatile memory
US7196928B2 · kind B2 · utility
645Cited by
22References
24Claims
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Key dates
| Filing date | Apr 5, 2005 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jun 27, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5648
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.