Low temperature wafer backside cleaning
US7198677B2 · kind B2 · utility
14Cited by
13References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ring is provided that, together with a wafer, separates a processing chamber into an upper portion and a lower portion so that one side of the wafer, such as the backside, can be cleaned or otherwise processed with little or no interaction to the frontside of the wafer. The wafer sits on pins extending from a plate so that processor cleaning gases can contact the surface of the wafer backside. In one embodiment, the ring is conductive, with an inner insulating ring, and the place is also conductive. The conductive plate and ring act as electrodes for plasma generation underneath the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.