Deposition of carbon- and transition metal-containing thin films
US7198820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2003 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Aug 15, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12625
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.