Methodologies for efficient inspection of test structures using electron beam scanning and step and repeat systems
US7198963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Oct 6, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are techniques for efficiently inspecting defects on voltage contrast test. In one embodiment, methodologies and test structures allow inspection to occur entirely within a charged particle system. In a specific embodiment, a method of localizing and imaging defects in a semiconductor test structure suitable for voltage contrast inspection is disclosed. A charged particle beam based tool is used to determine whether there are any defects present within a voltage contrast test structure. The same charged particle beam based tool is then used to locate defects determined to be present within the voltage contrast test structure. Far each localized defect, the same charged particle beam based tool may then be used to generate a high resolution image of the localized defect whereby the high resolution image can later be used to classify the each defect. In one embodiment, the defect's presence and location are determined without rotating the test structure relative to the charged particle beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.