N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7198977B2 · kind B2 · utility
8Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Dec 21, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Feb 26, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.