Method for eliminating backside metal peeling during die separation
US7198988B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2005 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Nov 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting metal traces and contacts on a fabricated semiconductor wafer from mechanical damage during dicing of the fabricated wafer, where the metal traces and contacts form electrical connections with an active device region of the semiconductor. The method includes the steps of providing a group of discrete metal deposits adjacent the metal traces and contacts, wherein said metal deposits are substantially not contiguously connected to each other or to any traces or contacts of the active device regions of semiconductor die, attaching the fabricated wafer to an adhesive tape used for securing the fabricated wafer during a die separation process, separating the die from the fabricated wafer while attached to the adhesive tape and removing the die from the adhesive tape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.