Strained finFETs and method of manufacture

US7198995B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dureseti Chidambarrao · Weston, US
• Omer H. Dokumaci · Wappingers Falls, US
• Oleg Gluschenkov · Poughkeepsie, US

Key dates

• Filing date: Dec 12, 2003
• Grant date: Apr 3, 2007
• Expiry date: Mar 18, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material form a first island and second island at an pFET region and a nFET region, respectively. A tensile hard mask is formed on the first and the second island layer prior to forming finFETs. An Si epitaxial layer is grown on the sidewalls of the finFETs with the hard mask, now a capping layer which is under tension, preventing lateral buckling of the nFET fin.