Inventor · Poughkeepsie, NY, US

Oleg Gluschenkov

255Patents
21h-index
235Co-inventors
93Inventor score

Filing activity: Jun 16, 2000 → Sep 23, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9799736B1 High acceptor level doping in silicon germanium Electricity 398 Active
US6977194B2 Structure and method to improve channel mobility by gate electrode stress modification Electricity 180 Expired
US7198995B2 Strained finFETs and method of manufacture Electricity 142 Expired
US6891192B2 Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions Electricity 114 Expired
US8217423B2 Structure and method for mobility enhanced MOSFETs with unalloyed silicide Electricity 98 Active
US7247534B2 Silicon device on Si:C-OI and SGOI and method of manufacture Electricity 90 Expired
US7015082B2 High mobility CMOS circuits Electricity 88 Expired
US6930060B2 Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric Electricity 76 Expired
US6720630B2 Structure and method for MOSFET with metallic gate electrode Emerging Cross-Sectional Technologies 69 Expired
US7247547B2 Method of fabricating a field effect transistor having improved junctions Electricity 50 Expired
US7279413B2 High-temperature stable gate structure with metallic electrode Electricity 46 Expired
US7138685B2 Vertical MOSFET SRAM cell Electricity 43 Expired
US7030012B2 Method for manufacturing tungsten/polysilicon word line structure in vertical DRAM Electricity 37 Expired
US6451662B1 Method of forming low-leakage on-chip capacitor Electricity 35 Expired
US9773901B1 Bottom spacer formation for vertical transistor Electricity 29 Active
US7084024B2 Gate electrode forming methods using conductive hard mask Electricity 28 Expired
US7002209B2 MOSFET structure with high mechanical stress in the channel Electricity 26 Expired
US6358867B1 Orientation independent oxidation of silicon Emerging Cross-Sectional Technologies 22 Expired
US6444516B1 Semi-insulating diffusion barrier for low-resistivity gate conductors Electricity 22 Expired
US7585704B2 Method of producing highly strained PECVD silicon nitride thin films at low temperature Electricity 22 Expired
US6544874B2 Method for forming junction on insulator (JOI) structure Electricity 22 Expired
US8237278B2 Configurable interposer Emerging Cross-Sectional Technologies 19 Active
US6982196B2 Oxidation method for altering a film structure and CMOS transistor structure formed therewith Electricity 19 Expired
US7504700B2 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method Electricity 18 Expired
US6806534B2 Damascene method for improved MOS transistor Electricity 18 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.