Semiconductor system having a pn transition and method for manufacturing a semiconductor system

US7199031B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Maria del Prado Lavin Lopez · Yecla, ES
• Richard Spitz · Reutlingen, DE
• Alfred Goerlach · Tübingen, DE
• Barbara Will · Herrenberg, DE

Key dates

• Filing date: Nov 19, 2002
• Grant date: Apr 3, 2007
• Expiry date: Nov 19, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/965

Abstract

A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane.