Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
US7199032B2 · kind B2 · utility
0Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Jul 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.