Method for patterning dielectric layers on semiconductor substrates

US7199060B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Grit Schwalbe · Dresden, DE
• Thomas Ruder · Dresden, DE

Key dates

• Filing date: Dec 1, 2003
• Grant date: Apr 3, 2007
• Expiry date: Jan 19, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76802
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a process for patterning dielectric layers. A photoresist layer is applied to the dielectric layer and patterned. Then, the pattern which has been predetermined by the resist mask is transferred to the dielectric layer. The incineration of the resist mask is carried out a temperature of 50° C. to 200° C., with the oxygen plasma being generated from a gas which has an oxygen content of 40 to 60% by volume. During a subsequent step of cleaning the patterned dielectric layer using dilute hydrofluoric acid, the trenches which have been introduced into the dielectric layer are widened to a significantly lesser extent than after incineration under the conditions which have previously been customary.