Patent · US Expired

BAW resonator

US7199683B2 · kind B2 · utility

37Cited by

7References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Thalhammer · Iffeldorf, DE
Robert Aigner · Winter Garden, US
Stephan Marksteiner · Putzbrunn, DE

Key dates

Filing date	Feb 28, 2005
Grant date	Apr 3, 2007
Priority date	—
Expiry date	Mar 9, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/175
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.