Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
US7201800B2 · kind B2 · utility
11Cited by
8References
28Claims
0Family size
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Key dates
| Filing date | Oct 12, 2004 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Oct 12, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.