Method of forming at least one thin film device
US7202179B2 · kind B2 · utility
29Cited by
3References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Apr 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/411
Abstract
This invention provides a method of forming at least one thin film device, such as for example a thin film transistor. The method includes providing a substrate and depositing a plurality of thin film device layers upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film layers and 3D template structure are etched and at least one thin film layer is undercut.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.