Magnetoresistive random access memory and driving method thereof
US7203088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2005 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Mar 1, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.