Method for forming porous film
US7205030B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After applying a film-forming composition containing a polysiloxane, a pore-forming agent, an onium salt, and a solvent onto a semiconductor substrate, the solvent is evaporated from the film-forming composition in a first heat treatment. Then, a second heat treatment is carried out in an inert-gas atmosphere to promote the polymerization of the polysiloxane and thus form a polysiloxane resin film. Thereafter, a third heat treatment is carried out in an oxidizing-gas ambient to form pores in the polysiloxane resin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.