Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method
US7205168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2003 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jun 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
Abstract
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.