Atomic layer deposition of hafnium-based high-k dielectric
US7205247B2 · kind B2 · utility
538Cited by
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13Claims
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Key dates
| Filing date | Sep 29, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Sep 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.