Phase change memory and method therefor
US7205562B2 · kind B2 · utility
25Cited by
6References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jan 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory material and a first tapered contact adjacent to the memory material. The phase change memory may further include a second tapered contact separated from the first tapered contact and adjacent to the memory material, wherein the first and second tapered contacts are adapted to provide a signal to the memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.