Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing method
US7205607B2 · kind B2 · utility
5Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power device includes an insulated gate and a trench-gate structure. The trench-gate structure is formed on a semiconductor substrate covered by an epitaxial layer. The trench is formed in the semiconductor to form the device gate region. A dielectric coating is provided on the inner and bottom walls of the trench. The gate region includes a conductive spacer layer on the coating layer only on the inner walls of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.