High density ROM cell
US7205614B2 · kind B2 · utility
5Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Apr 16, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the silicon substrate, a plurality of first heavily doped regions being of a first conductive type installed in the first doped region, a second doped region being of the second conductive type installed on the silicon substrate, and a gate installed on the surface of the silicon substrate and adjacent to the first doped region and the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.