Te-Sun Wu
13Patents
5h-index
16Co-inventors
59Inventor score
Filing activity: Nov 19, 1993 → Jan 6, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5620915A | Method for bypassing null-code sections for read-only memory by access line control | Physics | 39 | Expired |
| US5330924A | Method of making 0.6 micrometer word line pitch ROM cell by 0.6 micrometer technology | Electricity | 37 | Expired |
| US5572147A | Power supply voltage detector | Electricity | 13 | Expired |
| US6014018A | Voltage-reducing device with low power dissipation | Physics | 12 | Expired |
| US5561624A | Read-only-memory array with coding after metallization | Electricity | 11 | Expired |
| US5493527A | High density ROM with select lines | Physics | 5 | Expired |
| US7205614B2 | High density ROM cell | Physics | 5 | Expired |
| US5572056A | High density ROM | Electricity | 4 | Expired |
| US7079433B1 | Wafer level burn-in of SRAM | Physics | 3 | Expired |
| US5475637A | Active bit-line clamp circuit for flat cell structure of mask read-only memory | Physics | 3 | Expired |
| US5380676A | Method of manufacturing a high density ROM | Electricity | 2 | Expired |
| US5939900A | Input buffer | Electricity | 1 | Expired |
| US6420859B1 | Voltage supply controller | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.