Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours
US7208347B2 · kind B2 · utility
9Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jan 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.