Replacement gate process for making a semiconductor device that includes a metal gate electrode

US7208361B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Uday Shah · Portland, US
• Chris Barns · Wilsonville, US
• Mark L. Doczy · Beaverton, US
• Justin K. Brask · Portland, US
• Jack T. Kavalieros · Portland, US
• Matthew V. Metz · Portland, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Mar 24, 2004
• Grant date: Apr 24, 2007
• Expiry date: Dec 8, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

A method for making a semiconductor device is described. That method comprises forming a polysilicon layer on a dielectric layer, which is formed on a substrate. The polysilicon layer is etched to generate a patterned polysilicon layer with an upper surface that is wider than its lower surface. The method may be applied, when using a replacement gate process to make transistors that have metal gate electrodes.