Inventor · Portland, OR, US

Uday Shah

134Patents
27h-index
66Co-inventors
93Inventor score

Filing activity: May 12, 2000 → May 17, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7326656B2 Method of forming a metal oxide dielectric Emerging Cross-Sectional Technologies 424 Expired
US7531437B2 Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material Emerging Cross-Sectional Technologies 172 Expired
US7825437B2 Unity beta ratio tri-gate transistor static random access memory (SRAM) Electricity 162 Active
US7745270B2 Tri-gate patterning using dual layer gate stack Electricity 115 Active
US7898041B2 Block contact architectures for nanoscale channel transistors Electricity 101 Active
US7208361B2 Replacement gate process for making a semiconductor device that includes a metal gate electrode Electricity 94 Expired
US7157378B2 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Electricity 85 Expired
US7479421B2 Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby Electricity 84 Expired
US7407847B2 Stacked multi-gate transistor design and method of fabrication Electricity 80 Active
US7071064B2 U-gate transistors and methods of fabrication Electricity 76 Expired
US7153784B2 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Electricity 67 Expired
US7390709B2 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Electricity 62 Expired
US7279375B2 Block contact architectures for nanoscale channel transistors Electricity 55 Expired
US7153734B2 CMOS device with metal and silicide gate electrodes and a method for making it Emerging Cross-Sectional Technologies 53 Expired
US7220635B2 Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer Electricity 53 Expired
US7361958B2 Nonplanar transistors with metal gate electrodes Emerging Cross-Sectional Technologies 50 Expired
US7176090B2 Method for making a semiconductor device that includes a metal gate electrode Emerging Cross-Sectional Technologies 46 Expired
US7355281B2 Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode Electricity 44 Expired
US7183184B2 Method for making a semiconductor device that includes a metal gate electrode Electricity 41 Expired
US7138323B2 Planarizing a semiconductor structure to form replacement metal gates Electricity 40 Expired
US8283653B2 Non-planar germanium quantum well devices Electricity 36 Active
US7550333B2 Nonplanar device with thinned lower body portion and method of fabrication Emerging Cross-Sectional Technologies 35 Active
US7160767B2 Method for making a semiconductor device that includes a metal gate electrode Electricity 34 Expired
US7547637B2 Methods for patterning a semiconductor film Electricity 34 Expired
US7528025B2 Nonplanar transistors with metal gate electrodes Emerging Cross-Sectional Technologies 34 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.