Non-volatile memory resistor cell with nanotip electrode
US7208372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2005 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Apr 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.