Robert Barrowcliff
13Patents
6h-index
11Co-inventors
55Inventor score
Filing activity: Mar 30, 1999 → Mar 5, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7208372B2 | Non-volatile memory resistor cell with nanotip electrode | Electricity | 28 | Expired |
| US7098144B2 | Iridium oxide nanotubes and method for forming same | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7635600B2 | Photovoltaic structure with a conductive nanowire array electrode | Emerging Cross-Sectional Technologies | 15 | Active |
| US6090963A | Alkene ligand precursor and synthesis method | Chemistry; Metallurgy | 14 | Expired |
| US7438759B2 | Ambient environment nanowire sensor | Emerging Cross-Sectional Technologies | 11 | Active |
| US7255745B2 | Iridium oxide nanowires and method for forming same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7297642B2 | Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7053403B1 | Iridium oxide nanostructure | Performing Operations; Transporting | 3 | Expired |
| US7022621B1 | Iridium oxide nanostructure patterning | Performing Operations; Transporting | 3 | Expired |
| US7364924B2 | Silicon phosphor electroluminescence device with nanotip electrode | Electricity | 2 | Expired |
| US8242482B2 | Nanotip electrode electroluminescence device | Electricity | 1 | Active |
| US7094691B2 | MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications | Chemistry; Metallurgy | 1 | Expired |
| US6849467B1 | MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.