Silicon oxidation method
US7208377B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jun 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming, by thermal oxidation, a silicon oxide layer on an integrated circuit including three-dimensional silicon patterns, includes implanting a first element according to a first angle with respect to a horizontal direction. The first element is electrically neutral and has a first effect on the growth rate of a thermal oxide on silicon. A second element is implanted according to a second angle with respect to the horizontal direction. The second element is electrically neutral and has a second effect complementary to the first effect on the growth rate of a thermal oxide on silicon. The second angle is distinct from the first angle, and one of the first and second angles is a right angled. The silicon is thermally oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.