Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

US7208393B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Benjamin A. Haskell · Lompoc, US
• Melvin McLaurin · Midland School, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: May 31, 2005
• Grant date: Apr 24, 2007
• Expiry date: May 31, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.