Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness direction
US7208408B2 · kind B2 · utility
4Cited by
12References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.