Adjustment of distance between source plasma and mirrors to change partial coherence
US7208747B2 · kind B2 · utility
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1References
11Claims
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Key dates
| Filing date | May 12, 2006 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | May 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70583
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.