Memory element with nitrogen-containing active layer
US7208757B1 · kind B1 · utility
1Cited by
1References
2Claims
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Key dates
| Filing date | Dec 23, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Feb 16, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.